technical data npn silicon dual transistor qualified per mil-prf-19500/495 devices qualified level 2n5793 2n5794 2n5794u jan jantx jantxv maximum ratings ratings symbol value units collector-emitter voltage v ceo 40 vdc collector-base voltage v cbo 75 vdc emitter-base voltage v ebo 6.0 vdc collector current i c 600 madc one section (1) total device (2) total power dissipation @ t a = +25 0 c p t 0.5 0.6 w operating & storage junction temperature range t op , t stg -65 to +200 0 c 1) derate linearly 2.86 mw/ 0 c for t a > +25 0 c 2) derate linearly 3.43 mw/ 0 c for t a > +25 0 c to-78* 6 pin surface mount* *see milprf19500/495 for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector-emitter breakdown current i c = 10 madc v (br) ceo 40 vdc collector-base cutoff current v cb = 75 vdc v cb = 50 vdc i cbo 10 10 adc adc emitter-base cutoff current v eb = 6.0 vdc v eb = 4.0 vdc i ebo 10 10 adc adc 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 794-1666 / fax: (978) 689-0803 42203 page 1 of 2 downloaded from: http:///
2n5793, 2n5794 jan series electrical characteristics (cont) characteristics symbol min. max. unit on characteristics (3) forward-current transfer ratio i c = 100 adc, v ce = 10 vdc 2n5793 i c = 1.0 madc, v ce = 10 vdc i c = 10 madc, v ce = 10 vdc i c = 150 madc, v ce = 10 vdc i c = 300 madc, v ce = 10 vdc i c = 150 madc, v ce = 1.0 vdc i c = 100 adc, v ce = 10 vdc 2n5794 i c = 1.0 madc, v ce = 10 vdc 2n5794u i c = 10 madc, v ce = 10 vdc i c = 150 madc, v ce = 10 vdc i c = 300 madc, v ce = 10 vdc i c = 150 madc, v ce = 1.0 vdc h fe h fe 20 25 35 40 25 20 35 50 75 100 40 50 120 300 collector-emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 300 madc, i b = 30 madc v ce(sat) 0.3 0.9 vdc base-emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 300 madc, i b = 30 madc v be(sat) 0.6 1.2 1.8 vdc dynamic characteristics forward current transfer ratio, magnitude i c = 20 madc, v ce = 20 vdc, f = 100 mhz ? h fe ? 2.0 10 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 8.0 pf input capacitance v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 33 pf switching characteristics turn-on time v cc = 30 vdc; i c = 150 madc; i b1 = 15 madc, v be(off) = 0.5 vdc t on 45 s turn-off time v cc = 30 vdc; i c = 150 madc; i b1 = i b2 = 15 madc t off 310 s (3) pulse test: pulse width = 300 s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 794-1666 / fax: (978) 689-0803 42203 page 2 of 2 downloaded from: http:///
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